IRFU5410PBF
Trans MOSFET P-CH 100V 13A 3-Pin(3+Tab) IPAK
- RoHS 10 Compliant
- Tariff Charges
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
- Ultra Low On-Resistance
- P-Channel
- Surface Mount
- Advanced Process Technology
- Fast Switching
- Fully Avalanche Rated
- Lead-Free
Technical Attributes
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| Description | Value | |
|---|---|---|
| P Channel | ||
| 13 | ||
| 205 | ||
| 100 | ||
| 4 | ||
| 3 | ||
| 150 °C | ||
| 66 | ||
| TO-251AA | ||
| Through Hole |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |