IRFU5305PBF
Trans MOSFET P-CH 55V 31A 3-Pin(3+Tab) IPAK
- RoHS 10 Compliant
- Tariff Charges
Fifth Generation HEXFETs from international Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight led version(IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
- Advanced process technology
- Ultra low on-resistance
- Fast switching
- Fully avalanche rated
- Dynamic dv/dt rating
Technical Attributes
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| Description | Value | |
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| P Channel | ||
| 31 | ||
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| TO-251AA | ||
| Through Hole |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290040 |
| Schedule B: | 8541290080 |