IRFR2405TRPBF
Power MOSFET, N Channel, 55 V, 56 A, 0.016 ohm, TO-252AA, Surface Mount
- RoHS 10 Compliant
- Tariff Charges
Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
- Surface Mount
- Advanced Process Technology
- Dynamic dv/dt Rating
- Fast Switching
- Fully Avalanche Rated
- Lead-Free
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 56 A | ||
| 16 mOhm | ||
| 55 V | ||
| 4 V | ||
| 3 | ||
| 175 °C | ||
| 110 W | ||
| HEXFET Series | ||
| TO-252AA | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |