IRFP4668PBF
Power MOSFET, N Channel, 200 V, 130 A, 0.008 ohm, TO-247AC, Through Hole
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Manufacturer:Infineon
Product Category:
Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: IRFP4668PBF
Secondary Manufacturer Part#: IRFP4668PBF
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RoHS 10 Compliant -
Tariff Charges
The IRFP4668PBF is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET featured with improved gate, avalanche and dynamic dV/dt ruggedness, fast switching. Applicable at high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.
- Enhanced body diode dV/dt and dI/dt capability
- Fully characterized capacitance and avalanche SOA
- Drain to source voltage (Vds) of 200V
- Gate to source voltage of ±30V
- On resistance Rds(on) of 8mohm at Vgs 10V
- Power dissipation Pd of 520W at 25°C
- Operating junction temperature range from -55°C to 175°C
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 130 | ||
| 9.7 mOhm | ||
| 200 | ||
| 5 | ||
| 3 | ||
| 175 °C | ||
| 520 | ||
| TO-247AC | ||
| Through Hole |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290040 |
| Schedule B: | 8541290080 |
Factory Lead Time: