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IRFP250NPBF

Power MOSFET, N Channel, 200 V, 30 A, 0.075 ohm, TO-247AC, Through Hole

Manufacturer:Infineon
Product Category: Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: IRFP250NPBF
Secondary Manufacturer Part#: 63J6859
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The IRFP250NPBF is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, ease of Paralleling, rugged, fast switching, simple drive requirements and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.

  • Drain to source voltage (Vds) of 200V
  • Gate to source voltage of ±20V
  • On resistance Rds(on) of 75mohm at Vgs 10V
  • Power dissipation Pd of 214W at 25°C
  • Continuous drain current Id of 30A at Vgs 10V and 25°C
  • Operating junction temperature range from -55°C to 175°C

Technical Attributes

Find Similar Parts

Description Value
N Channel
30
75
200
4
3
175 °C
214
TO-247AC
Through Hole

ECCN / UNSPSC / COO

Description Value
Country of Origin: RECOVERY FEE
ECCN: EAR99
HTSN: 8541290095
Schedule B: 8541290080
In Stock :  0
Additional inventory
Factory Lead Time: 777 Weeks
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