IRFL024ZTRPBF
Trans MOSFET N-CH 55V 5.1A 4-Pin(3+Tab) SOT-223 T/R
- RoHS 10 Compliant
- Tariff Charges
This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
- Advanced process technology
- Ultra low on-resistance
- 150°C operating temperature
- Fast switching
- Repetitive avalanche allowed up to Tjmax
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 5.1 | ||
| 57.5 | ||
| 55 | ||
| 4 | ||
| 4 | ||
| 150 °C | ||
| 2.8 | ||
| SOT-223 | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |