IRFI4019H-117P
Transistor MOSFET Array Dual N-CH 150V 8.7A 5-Pin TO-220FP Tube
- RoHS 10 Compliant
- Tariff Charges
The IRFI4019H-117P is a HEXFET® dual N-channel Power MOSFET designed for class-D audio amplifier applications. It consists of two power MOSFET switches connected in half-bridge configuration. The latest process is used to achieve low ON-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key class-D audio amplifier performance factors such as efficiency, THD and EMI. These combine to make this half-bridge a highly efficient, robust and reliable device. It can delivery up to 200W per channel into 8? load in half-bridge configuration amplifier.
- Reduces the part count by half
- Facilitates better PCB layout
- Low RDS (ON) for improved efficiency
- Low Qg and Qsw for better THD and improved efficiency
- Low Qrr for better THD and lower EMI
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Dual N Channel | ||
| 8.7 | ||
| 95 | ||
| 150 | ||
| 5 | ||
| 150 °C | ||
| 18 | ||
| TO-220FP |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | NO RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |