IRFH4253DTRPBF
Dual MOSFET, N Channel + Schottky, 25 V, 145 A, 0.0011 ohm
Click image to enlarge
Manufacturer:Infineon
Product Category:
Discretes, FETs, MOSFET Arrays
Avnet Manufacturer Part #: IRFH4253DTRPBF
Secondary Manufacturer Part#: IRFH4253DTRPBF
-
RoHS 10 Compliant -
Tariff Charges
IRFH4253DTRPBF is a HEXFET® Power MOSFET. Application includes control and synchronous MOSFETs for synchronous buck converters.
- Control and synchronous MOSFETs in one package, increased power density
- Low charge control MOSFET (10nC typical), lower switching losses
- Low RDSON synchronous MOSFET (1.45mohm), lower conduction losses
- Intrinsic schottky diode with low forward voltage on Q2, lower switching losses
- Environmentally friendlier, industrial qualification, increased reliability
- Drain-to-source breakdown voltage is 25V (typ, Q1, Q2, VGS = 0V, ID = 250µA/1.0mA)
- Breakdown voltage temp coefficient is 22mV/°C (typ, Q1, Q2, reference to 25°C, ID = 1.0mA)
- Gate threshold voltage is 1.6V (typ, Q1: VDS = VGS, ID = 35µA, Q2: VDS = VGS, ID = 100µA)
- Drain-to-source leakage current is 1.0µA (typ, VDS = 20V, VGS = 0V, TJ = 25°C)
- Dual PQFN package, operating junction and storage temperature range from -55 to + 150°C
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Dual N Channel | ||
| 64|145 | ||
| 3.2 | ||
| 25 | ||
| 8 | ||
| 150 °C | ||
| 31 | ||
| PQFN |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542390050 |
| Schedule B: | 8542390060 |
Factory Lead Time: