IRFB5620PBF
Power MOSFET, N Channel, 200 V, 25 A, 0.06 ohm, TO-220AB, Through Hole
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RoHS 10 Compliant -
Tariff Charges
The IRFB5620PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve low ON-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device. It can deliver up to 300W per channel into 8? load in half-bridge configuration amplifier. It is suitable for full-bridge and push-pull application.
- Low RDS (ON) for improved efficiency
- Low Qg and Qsw for better THD and improved efficiency
- Low QRR for better THD and lower EMI
Technical Attributes
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| Description | Value | |
|---|---|---|
| N Channel | ||
| 25 | ||
| 72.5 | ||
| 200 | ||
| 5 | ||
| 3 | ||
| 175 °C | ||
| 144 | ||
| TO-220AB | ||
| Through Hole |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290040 |
| Schedule B: | 8541290080 |
Factory Lead Time: