IRFB4332PBF
Trans MOSFET N-CH 250V 60A 3-Pin(3+Tab) TO-220AB
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Manufacturer:Infineon
Product Category:
Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: IRFB4332PBF
Secondary Manufacturer Part#: IRFB4332PBF
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RoHS 10 Compliant -
Tariff Charges
This HEXFET Power MOSFET is specifically designed for sustain; energy recovery & pass switch applications in plasma display panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low Epulse rating. Additional features of this MOSFET are 175 deg C operating junction temperature & high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust & reliable device for PDP driving applications.
- Advanced Process Technology
- Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications
- Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
- Low QG for Fast Response
- High Repetitive Peak Current Capability for Reliable Operation
- Short Fall & Rise Times for Fast Switching
- 175°C Operating Junction Temperature for Improved Ruggedness
- Repetitive Avalanche Capability for Robustness and Reliability
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 60 | ||
| 33 | ||
| 250 | ||
| 5 | ||
| 3 | ||
| 175 °C | ||
| 390 | ||
| TO-220AB | ||
| Through Hole |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |
Factory Lead Time: