IRFB4110PBF
Power MOSFET, N Channel, 100 V, 180 A, 0.0045 ohm, TO-220AB, Through Hole
- RoHS 10 Compliant
- Tariff Charges
The IRFB4110PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.
- Improved gate, avalanche and dynamic dv/dt ruggedness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and dI/dt capability
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 180 | ||
| 4.5 | ||
| 100 | ||
| 4 | ||
| 3 | ||
| 175 °C | ||
| 370 | ||
| TO-220AB | ||
| Through Hole |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | PROJECTED FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |