IRFB4019PBF

IRFB4019PBF is a digital audio MOSFET in a 3-pin TO-220AB package. This digital audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery, and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust, and reliable device for Class-D audio amplifier applications.

• Drain-to-source voltage is 150V
• Gate-to-source voltage is ±20V
• Continuous drain current is 17A VGS at 10V, Tc = 25°C
• Static drain-to-source on-resistance RDS(on) is 95mohm max
• Low QG and QSW for better THD and improved efficiency
• Low QRR for better THD and lower EMI
• Can deliver up to 200W per channel into 8ohm load in half-bridge configuration amplifier
• Operating temperature range from -55 to 175°C