IRF8010PBF
Power MOSFET, N Channel, 100 V, 80 A, 0.015 ohm, TO-220AB, Through Hole
- RoHS 10 Compliant
- Tariff Charges
The IRF8010PBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters.
- Fully characterized capacitance including effective COSS to simplify design
- Fully characterized avalanche voltage and current
- Dynamic dV/dt rating
- Fast switching
- Fully avalanche rating
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 80 | ||
| 15 | ||
| 100 | ||
| 4 | ||
| 3 | ||
| 175 °C | ||
| 260 | ||
| TO-220AB | ||
| Through Hole |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |