IRF7779L2TRPBF
Power MOSFET, N Channel, 150 V, 67 A, 0.009 ohm, DirectFET L8, Surface Mount
- RoHS 10 Compliant
- Tariff Charges
The IRF7779L2TR/TR1PbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D 2 PAK and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems. The IRF7779L2TR/TR1PbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance power converter.
- RoHS Compliant, Halogen Free
- Lead-Free (Qualified up to 260°C Reflow)
- Ideal for High Performance Isolated Converter
- Primary Switch Socket
- Optimized for Synchronous Rectification
- Low Conduction Losses
- High Cdv/dt Immunity
- Low Profile (<0.7mm)
- Dual Sided Cooling Compatible
- Compatible with existing Surface Mount Techniques
- Industrial Qualified
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 67 | ||
| 11 mOhm | ||
| 150 | ||
| 5 | ||
| 15 | ||
| 175 °C | ||
| 125 | ||
| DirectFET L8 | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290085 |
| Schedule B: | 8541290080 |