IRF7341QTRPBF
Transistor MOSFET Array Dual N-CH 55V 5.1A 8-Pin SOIC T/R
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RoHS 10 Compliant -
Tariff Charges
These HEXFET Power MOSFET’s in a Dual SO-8 package utilize the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. The 175°C rating for the SO-8 package provides improved thermal performance with increased safe operating area and dual MOSFET die capability make it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.
- Advanced Process Technology
- Dual N-Channel MOSFET
- Ultra Low On-Resistance
- 175°C Operating Temperature
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Dual N Channel | ||
| 5.1 | ||
| 50 | ||
| 55 | ||
| 8 | ||
| 175 °C | ||
| 2.4 | ||
| AEC-Q101 | ||
| SOIC |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290040 |
| Schedule B: | 8541290080 |
Factory Lead Time: