IRF640NPBF
Power MOSFET, N Channel, 200 V, 18 A, 0.15 ohm, TO-220AB, Through Hole
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Manufacturer:Infineon
Product Category:
Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: IRF640NPBF
Secondary Manufacturer Part#: 63J7351
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RoHS 10 Compliant -
Tariff Charges
The IRF640NPBF is 200V single N channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
- Drain to source voltage Vds is 200V
- Gate to source voltage is ±20V
- On resistance Rds(on) of 150mohm
- Power dissipation Pd of 150W at 25°C
- Continuous drain current Id of 18A at Vgs 10V and 25°C
- Operating junction temperature range from -55°C to 175°C
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 18 | ||
| 150 | ||
| 200 | ||
| 4 | ||
| 3 | ||
| 175 °C | ||
| 150 | ||
| TO-220AB | ||
| Through Hole |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |
Factory Lead Time: