IRF540NPBF
Power MOSFET, N Channel, 100 V, 33 A, 0.044 ohm, TO-220AB, Through Hole
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Manufacturer:Infineon
Product Category:
Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: IRF540NPBF
Secondary Manufacturer Part#: IRF540NPBF
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RoHS 10 Compliant -
Tariff Charges
The IRF540NPBF is 100V single N channel HEXFET power MOSFET in 3 pin TO-220AB package. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit combined with fast switching speed and ruggedized device design that HEXFET power MOSFETs which are well known for the designer with an extremely efficient and reliable device for use in a wide variety of applications.
- Drain to source voltage Vds is 100V
- Gate to source voltage is ±20V
- On-resistance Rds(on) of 44mohm at Vgs of 10V
- Power dissipation Pd of 130W at 25°C
- Continuous drain current Id of 33A at Vgs 10V and 25°C
- Operating junction temperature range from -55°C to 175°C
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 33 A | ||
| 44 mOhm | ||
| 100 V | ||
| 4 V | ||
| 3 | ||
| 175 °C | ||
| 130 W | ||
| TO-220AB | ||
| Through Hole |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290040 |
| Schedule B: | 8541290080 |
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