IRF530NSTRLPBF
Power MOSFET, N Channel, 100 V, 17 A, 0.09 ohm, TO-263 (D2PAK), Surface Mount
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RoHS 10 Compliant -
Tariff Charges
The IRF530NSTRLPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation for use in a wide variety of applications. The surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
- Advanced process technology
- Ultra-low ON-resistance
- Dynamic dV/dt rating
- Fast switching
- Fully avalanche rating
Technical Attributes
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| Description | Value | |
|---|---|---|
| N Channel | ||
| 17 | ||
| 90 | ||
| 100 | ||
| 4 | ||
| 3 | ||
| 175 °C | ||
| 3.8 | ||
| TO-263 (D2PAK) | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |
Factory Lead Time: