IRF530NPBF
Power MOSFET, N Channel, 100 V, 17 A, 0.09 ohm, TO-220AB, Through Hole
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Manufacturer:Infineon
Product Category:
Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: IRF530NPBF
Secondary Manufacturer Part#: IRF530NPBF
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RoHS 10 Compliant -
Tariff Charges
The IRF530NPBF from Infineon is a 100V single N channel HEXFET power MOSFET in a TO-220AB package. This MOSFET features extremely low on-resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and is fully avalanche rated. As a result, these power MOSFETs are known to provide extreme efficiency and reliability which can be used in a wide variety of applications.
- Drain to source voltage Vds is 100V
- Gate to source voltage is ±20V
- On resistance Rds(on) of 90mohm at Vgs of 10V
- Power dissipation Pd of 70W at 25°C
- Continuous drain current Id of 17A at Vgs 10V and 25°C
- Operating junction temperature range from -55°C to 175°C
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 17 | ||
| 90 | ||
| 100 | ||
| 4 | ||
| 3 | ||
| 175 °C | ||
| 70 | ||
| TO-220AB | ||
| Through Hole |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |
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