IRF3808STRLPBF
Power MOSFET, N Channel, 75 V, 106 A, 0.0059 ohm, TO-263 (D2PAK), Surface Mount
- RoHS 10 Compliant
- Tariff Charges
This Advanced Planar Stripe HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, low R?JC, fast switching speed and improved repetitive avalanche rating. This combination makes the design an extremely efficient and reliable choice for use in a wide variety of applications.
- Advanced Process Technology
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 106 | ||
| 7 | ||
| 75 | ||
| 4 | ||
| 3 | ||
| 175 °C | ||
| 200 | ||
| TO-263AB | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | PROJECTED FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |