IRF3710ZSTRLPBF
Power MOSFET, HEXFET®, N Channel, 100 V, 59 A, 0.014 ohm, TO-263 (D2PAK), Surface Mount
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Manufacturer:Infineon
Product Category:
Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: IRF3710ZSTRLPBF
Secondary Manufacturer Part#: 32AC7469
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RoHS 10 Compliant -
Tariff Charges
Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
- HEXFET® power MOSFET
- Advanced process technology
- Ultra-low on-resistance
- Dynamic dv/dt rating
- 175°C operating temperature
- Fast switching
- Repetitive avalanche allowed up to Tjmax
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 59 | ||
| 18 | ||
| 100 | ||
| 4 | ||
| 3 | ||
| 175 °C | ||
| 160 | ||
| TO-263AB | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | PROJECTED FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |
Factory Lead Time: