IRF3710ZPBF
Trans MOSFET N-CH 100V 59A 3-Pin(3+Tab) TO-220AB
- RoHS 10 Compliant
- Tariff Charges
This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
- Advanced process technology
- Fast switching
- Ultra low on-resistance
- Dynamic dv/dt rating
- Repetitive avalanche allowed up to Tjmax
- Product qualification according to JEDEC standard
- High-current carrying capability package
- Capable of being wave-soldered
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 59 | ||
| 18 | ||
| 100 | ||
| 4 | ||
| 3 | ||
| 175 °C | ||
| 160 | ||
| TO-220AB | ||
| Through Hole |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | PROJECTED FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |