IRF3710PBF
Power MOSFET, N Channel, 100 V, 46 A, 0.023 ohm, TO-220AB, Through Hole
- RoHS 10 Compliant
- Tariff Charges
The IRF3710PBF is a 100V single N-channel Advanced HEXFET® Power MOSFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
- Advanced process technology
- Ultra low on-resistance
- Dynamic dV/dt rating
- Fully avalanche rated
- 175°C Operating temperature
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 57 | ||
| 23 | ||
| 100 | ||
| 4 | ||
| 3 | ||
| 175 °C | ||
| 200 | ||
| TO-220AB | ||
| Through Hole |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |