IRF3415STRLPBF
Power MOSFET, N Channel, 150 V, 43 A, 0.042 ohm, TO-263AB, Surface Mount
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RoHS 10 Compliant -
Tariff Charges
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that H EXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF3415L) is available for low-profile applications.
- Advanced Process Technology
- Surface Mount (IRF3415S)
- Low-profile through-hole (IRF3415L)
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Lead-Free
Technical Attributes
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| Description | Value | |
|---|---|---|
| N Channel | ||
| 43 | ||
| 42 mOhm | ||
| 150 | ||
| 4 | ||
| 3 | ||
| 175 °C | ||
| 200 | ||
| TO-263 | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290040 |
| Schedule B: | 8541290080 |
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