IRF1407PBF
Power MOSFET, N Channel, 75 V, 130 A, 0.0078 ohm, TO-220AB, Through Hole
- RoHS 10 Compliant
- Tariff Charges
The IRF1407PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this HEXFET® power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
- Advanced process technology
- Dynamic dV/dt rating
- Repetitive avalanche allowed up to Tjmax
Technical Attributes
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| Description | Value | |
|---|---|---|
| N Channel | ||
| 130 | ||
| 7.8 | ||
| 75 | ||
| 4 | ||
| 3 | ||
| 175 °C | ||
| 330 | ||
| TO-220AB | ||
| Through Hole |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |