IR25607STRPBF
MOSFET DRVR 600V 2.5A 2-OUT Hi/Lo Side Non-Inv 16-Pin SOIC W T/R
- RoHS 10 Compliant
- Tariff Charges
The IR25607 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 V.
- Floating channel designed for bootstrap operation
- Fully operational to +600V
- Tolerant to negative transient voltage
- dV/dt immune
- Gate drive supply range from 10 to 20V
- Under voltage lockout for both channels
- 3.3V logic compatible
- Separate logic supply range from 3.3V to 20V
- Logic and power ground ±5V offset
- CMOS Schmitt-triggered inputs with pull-down
- Cycle by cycle edge-triggered shutdown logic
- Matched propagation delay for both channels
- Outputs in phase with inputs
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Non-Inverting | ||
| High and Low Side | ||
| 120 ns | ||
| 3.3V|CMOS|LSTTL | ||
| Matte Tin | ||
| 260 | ||
| 25 ns | ||
| 150 ns | ||
| 35 ns | ||
| 20 ns | ||
| 20 ns | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 2 | ||
| 16 | ||
| 2 | ||
| 2 | ||
| -40 to 125 °C | ||
| 125 °C | ||
| -40 °C | ||
| 94 ns | ||
| 16SOIC W | ||
| 2.5 A | ||
| 16 | ||
| IGBT, MOSFET, Mosfet | ||
| 10.5 x 7.6 x 2.35 mm | ||
| No | ||
| 600 V | ||
| 2.5 A | ||
| 2.5 A | ||
| SOIC W | ||
| 20 V | ||
| 10 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542390050 |
| Schedule B: | 8542390060 |