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IR25606STRPBF

MOSFET DRVR 600V 0.35A 2-OUT Hi/Lo Side Half Brdg Non-Inv 8-Pin SOIC T/R

Manufacturer:Infineon
Avnet Manufacturer Part #: IR25606STRPBF
Secondary Manufacturer Part#: IR25606STRPBF
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

The IR25606 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 V.

  • Floating channel designed for bootstrap operation
  • Fully operational to +600V
  • Tolerant to negative transient voltage
  • dV/dt immune
  • Gate drive supply range from 10 to 20V
  • Under voltage lockout for both channels
  • 3.3V, 5V and 15V input logic compatible
  • Cross-conduction prevention logic
  • Matched propagation delay for both channels
  • Outputs in phase with inputs
  • Logic and power ground +/-5V offset
  • Internal 540ns dead-time
  • Lower di/dt gate driver for better noise immunity

Technical Attributes

Find Similar Parts

Description Value
Half Bridge
Non-Inverting
High and Low Side
220 ns
3.3V|CMOS|LSTTL
CMOS, TTL, TTL
80 ns
300 ns
220 ns
46 ns
46 ns
Surface Mount
MSL 2 - 1 year
2
8
2
2
-40 to 125 °C
125 °C
-40 °C
200 ns
8SOIC
0.35 A
8
IGBT, MOSFET, Mosfet
5 x 4 x 1.5 mm
No
600 V
350 mA
200 mA
SOIC
20 V
10 V

ECCN / UNSPSC / COO

Description Value
Country of Origin: RECOVERY FEE
ECCN: EAR99
HTSN: 8542310075
Schedule B: 8542310075
In Stock :  0
Additional inventory
Factory Lead Time: 140 Weeks
Price for: Each
Quantity:
Min:2500  Mult:2500  
USD $:
2500+
$0.624
5000+
$0.59027
10000+
$0.57474
20000+
$0.5694
40000+
$0.56648