IR25606STRPBF
MOSFET DRVR 600V 0.35A 2-OUT Hi/Lo Side Half Brdg Non-Inv 8-Pin SOIC T/R
- RoHS 10 Compliant
- Tariff Charges
The IR25606 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 V.
- Floating channel designed for bootstrap operation
- Fully operational to +600V
- Tolerant to negative transient voltage
- dV/dt immune
- Gate drive supply range from 10 to 20V
- Under voltage lockout for both channels
- 3.3V, 5V and 15V input logic compatible
- Cross-conduction prevention logic
- Matched propagation delay for both channels
- Outputs in phase with inputs
- Logic and power ground +/-5V offset
- Internal 540ns dead-time
- Lower di/dt gate driver for better noise immunity
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Half Bridge | ||
| Non-Inverting | ||
| High and Low Side | ||
| 220 ns | ||
| 3.3V|CMOS|LSTTL | ||
| CMOS, TTL, TTL | ||
| 80 ns | ||
| 300 ns | ||
| 220 ns | ||
| 46 ns | ||
| 46 ns | ||
| Surface Mount | ||
| MSL 2 - 1 year | ||
| 2 | ||
| 8 | ||
| 2 | ||
| 2 | ||
| -40 to 125 °C | ||
| 125 °C | ||
| -40 °C | ||
| 200 ns | ||
| 8SOIC | ||
| 0.35 A | ||
| 8 | ||
| IGBT, MOSFET, Mosfet | ||
| 5 x 4 x 1.5 mm | ||
| No | ||
| 600 V | ||
| 350 mA | ||
| 200 mA | ||
| SOIC | ||
| 20 V | ||
| 10 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542310075 |
| Schedule B: | 8542310075 |