IR25603STRPBF
MOSFET DRVR 600V 2-OUT Hi/Lo Side Half Brdg Inv/Non-Inv 8-Pin SOIC N T/R
- RoHS 10 Compliant
- Tariff Charges
The IR25603(S) incorporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS 555 timer. A shutdown feature has been designed into the CT pin, so that both gate driver outputs can be disabled using a low voltage control signal. In addition, the gate driver output pulse widths are the same once the rising under voltage lockout threshold on Vcc has been reached, resulting in a more stable profile of frequency vs time at startup. Special attention has been paid to maximizing the latch immunity of the device and providing comprehensive ESD protection on all pins.
- Floating channel designed for bootstrap operation
- Integrated 600V half-bridge gate driver
- 15.6V zener clamp on Vcc
- True micro power start up
- Tighter initial dead time control
- Low temperature coefficient dead time
- Shutdown feature (1/6th Vcc) on CT pin
- Increased under voltage lockout Hysteresis (1V)
- Lower power level-shifting circuit
- Constant LO, HO pulse widths at startup
- Lower di/dt gate driver for better noise immunity
- Low side output in phase with RT
- Excellent latch immunity on all inputs and outputs
- ESD protection on all leads
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Half Bridge | ||
| Inverting|Non-Inverting | ||
| High and Low Side | ||
| 80 ns | ||
| Matte Tin | ||
| 260 | ||
| 100 ns | ||
| 150 ns | ||
| Surface Mount | ||
| MSL 2 - 1 year | ||
| 2 | ||
| 8 | ||
| 2 | ||
| 2 | ||
| 106 kHz | ||
| -40 to 125 °C | ||
| 125 °C | ||
| -40 °C | ||
| 45 ns | ||
| 8SOIC N | ||
| 8 | ||
| IGBT, MOSFET, Mosfet | ||
| 5 x 4 x 1.5 mm | ||
| No | ||
| 600 V | ||
| 260 mA | ||
| 180 mA | ||
| SOIC N | ||
| 16.8 V | ||
| 10 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | PROJECTED FEE |
| ECCN: | EAR99 |
| HTSN: | 8542310075 |
| Schedule B: | 8542310075 |