IR25602STRPBF
MOSFET DRVR 600V 0.36A 2-OUT Hi/Lo Side Half Brdg Inv/Non-Inv 8-Pin SOIC N T/R
- RoHS 10 Compliant
- Tariff Charges
The IR25602 is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates from 10 to 600 V.
- Floating channel designed for bootstrap operation
- Fully operational to +600V
- Tolerant to negative transient voltage
- dV/dt immune
- Gate drive supply range from 10 to 20V
- Under voltage lockout
- 3.3V, 5V and 15V input logic compatible
- Cross-conduction prevention logic
- Internally set dead-time
- High side output in phase with input
- Shut down input turns off both channels
- Matched propagation delay for both channels
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Half Bridge | ||
| Inverting|Non-Inverting | ||
| High and Low Side | ||
| 680 ns | ||
| 3.3V|5V|15V|CMOS|LSTTL | ||
| CMOS, TTL, TTL | ||
| Matte Tin | ||
| 260 | ||
| 90 ns | ||
| 820 ns | ||
| 170 ns | ||
| 60 ns | ||
| 60 ns | ||
| Surface Mount | ||
| MSL 2 - 1 year | ||
| 2 | ||
| 8 | ||
| 2 | ||
| 2 | ||
| -40 to 125 °C | ||
| 125 °C | ||
| -40 °C | ||
| 150 ns | ||
| 8SOIC N | ||
| 0.36 A | ||
| 8 | ||
| IGBT, MOSFET, Mosfet | ||
| 5 x 4 x 1.5 mm | ||
| No | ||
| 600 V | ||
| 360 mA | ||
| 210 mA | ||
| SOIC N | ||
| 20 V | ||
| 10 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542330001 |
| Schedule B: | 8542330000 |