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IR25602STRPBF

MOSFET DRVR 600V 0.36A 2-OUT Hi/Lo Side Half Brdg Inv/Non-Inv 8-Pin SOIC N T/R

Manufacturer:Infineon
Avnet Manufacturer Part #: IR25602STRPBF
Secondary Manufacturer Part#: IR25602STRPBF
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

The IR25602 is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates from 10 to 600 V.

  • Floating channel designed for bootstrap operation
  • Fully operational to +600V
  • Tolerant to negative transient voltage
  • dV/dt immune
  • Gate drive supply range from 10 to 20V
  • Under voltage lockout
  • 3.3V, 5V and 15V input logic compatible
  • Cross-conduction prevention logic
  • Internally set dead-time
  • High side output in phase with input
  • Shut down input turns off both channels
  • Matched propagation delay for both channels

Technical Attributes

Find Similar Parts

Description Value
Half Bridge
Inverting|Non-Inverting
High and Low Side
680 ns
3.3V|5V|15V|CMOS|LSTTL
CMOS, TTL, TTL
Matte Tin
260
90 ns
820 ns
170 ns
60 ns
60 ns
Surface Mount
MSL 2 - 1 year
2
8
2
2
-40 to 125 °C
125 °C
-40 °C
150 ns
8SOIC N
0.36 A
8
IGBT, MOSFET, Mosfet
5 x 4 x 1.5 mm
No
600 V
360 mA
210 mA
SOIC N
20 V
10 V

ECCN / UNSPSC / COO

Description Value
Country of Origin: RECOVERY FEE
ECCN: EAR99
HTSN: 8542330001
Schedule B: 8542330000
In Stock :  0
Additional inventory
Factory Lead Time: 140 Weeks
Price for: Each
Quantity:
Min:2500  Mult:2500  
USD $:
2500+
$0.624
5000+
$0.59027
10000+
$0.57474
20000+
$0.56
40000+
$0.546