IR25601STRPBF
MOSFET DRVR 600V 0.13A 2-OUT Hi/Lo Side Half Brdg Non-Inv 8-Pin SOIC N T/R
- RoHS 10 Compliant
- Tariff Charges
The IR25601 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
- Floating channel designed for bootstrap operation
- Fully operational to +600V
- Tolerant to negative transient voltage
- dV/dt immune
- Gate drive supply range from 10 to 20V
- Under voltage lockout for both channels
- 3.3V, 5V and 15V input logic compatible
- Cross-conduction prevention logic
- Internally set dead-time (100ns)
- Output in phase with input
- Matched propagation delay for both channels
- Lower di/dt gate driver for better noise immunity
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Half Bridge | ||
| Non-Inverting | ||
| High and Low Side | ||
| 220 ns | ||
| 3.3V|5V|15V|CMOS|LSTTL | ||
| CMOS, TTL, TTL | ||
| Matte Tin | ||
| 260 | ||
| 170 ns | ||
| 330 ns | ||
| 300 ns | ||
| 50 ns | ||
| 50 ns | ||
| Surface Mount | ||
| MSL 2 - 1 year | ||
| 2 | ||
| 8 | ||
| 2 | ||
| 2 | ||
| -40 to 125 °C | ||
| 125 °C | ||
| -40 °C | ||
| 220 ns | ||
| 8SOIC N | ||
| 0.13 A | ||
| 8 | ||
| IGBT, MOSFET, Mosfet | ||
| 5 x 4 x 1.5 mm | ||
| No | ||
| 600 V | ||
| 130 mA | ||
| 60 mA | ||
| SOIC N | ||
| 20 V | ||
| 10 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542310075 |
| Schedule B: | 8542310075 |