IR2235JTRPBF
MOSFET DRVR 1.2KV 0.5A 6-OUT Hi/Lo Side 3-Phase Brdg Inv 32-Pin PLCC T/R
- RoHS 10 Compliant
- Tariff Charges
The IR2235 (J&S) are high voltage, high speed power MOSFET and IGBT driver with three independent high side and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs, down to 2.5V logic. An independent operational amplifier provides an analog feedback of bridge current via an external current sense resistor. A current trip function which terminates all six outputs can also be derived from this resistor. A shutdown function is available to terminate all six outputs. An open drain FAULT signal is provided to indicate that an over-current or undervoltage shutdown has occurred. Fault conditions are cleared with the FLT-CLR lead. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channels can be used to drive N-channel power MOSFETs or IGBTs in the high side configuration which operates up to 600 volts or 1200 volts.
- Floating channel designed for bootstrap operation
- Fully operational to +600V or+1200V
- Tolerant to negative transient voltage dV/dt immune
- Gate drive supply range from 10V/12V to 20V DC and up to 25V for transient
- Undervoltage lockout for all channels
- Over-current shut down turns off all six drivers
- Independent 3 half-bridge drivers
- Matched propagation delay for all channels
- 2.5V logic compatible
- Outputs out of phase with inputs
- All parts are also available LEAD-FREE
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 3-Phase Bridge | ||
| Inverting | ||
| High and Low Side | ||
| 750 ns | ||
| 2.5V|CMOS|LSTTL | ||
| CMOS, TTL, TTL | ||
| Matte Tin | ||
| 250 | ||
| 70 ns | ||
| 150 ns | ||
| 950 ns | ||
| 1000 ns | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 6 | ||
| 32 | ||
| 6 | ||
| 6 | ||
| 125 °C | ||
| 125 °C | ||
| -55 °C | ||
| 700 ns | ||
| 32PLCC | ||
| 0.5 A | ||
| 32 | ||
| IGBT, MOSFET, Mosfet | ||
| 16.66 x 16.66 x 3.69 mm | ||
| No | ||
| 1200 V | ||
| 500 mA | ||
| 250 mA | ||
| PLCC | ||
| 20 V | ||
| 10 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542390050 |
| Schedule B: | 8542390060 |