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IR2233STRPBF

MOSFET DRVR 1.2KV 0.5A 6-OUT Hi/Lo Side 3-Phase Brdg Inv 28-Pin SOIC W T/R

Manufacturer:Infineon
Avnet Manufacturer Part #: IR2233STRPBF
Secondary Manufacturer Part#: IR2233STRPBF
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

The IR2233 (J&S) are high voltage, high speed power MOSFET and IGBT driver with three independent high side and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs, down to 2.5V logic. An independent operational amplifier provides an analog feedback of bridge current via an external current sense resistor. A current trip function which terminates all six outputs can also be derived from this resistor. A shutdown function is available to terminate all six outputs. An open drain FAULT signal is provided to indicate that an over-current or undervoltage shutdown has occurred. Fault conditions are cleared with the FLT-CLR lead. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channels can be used to drive N-channel power MOSFETs or IGBTs in the high side configuration which operates up to 600 volts or 1200 volts.

  • Floating channel designed for bootstrap operation
    • Fully operational to +600V or+1200V
    • Tolerant to negative transient voltage dV/dt immune
  • Gate drive supply range from 10V/12V to 20V DC and up to 25V for transient
  • Undervoltage lockout for all channels
  • Over-current shut down turns off all six drivers
  • Independent 3 half-bridge drivers
  • Matched propagation delay for all channels
  • 2.5V logic compatible
  • Outputs out of phase with inputs
  • All parts are also available LEAD-FREE

Technical Attributes

Find Similar Parts

Description Value
3-Phase Bridge
Inverting
High and Low Side
750 ns
2.5V|CMOS|LSTTL
CMOS, TTL, TTL
Matte Tin
260
70 ns
150 ns
950 ns
1000 ns
Surface Mount
MSL 3 - 168 hours
6
28
6
6
125 °C
125 °C
-55 °C
700 ns
28SOIC W
0.5 A
28
IGBT, MOSFET, Mosfet
18.1 x 7.6 x 2.35 mm
No
1200 V
500 mA
250 mA
SOIC W
20 V
10 V

ECCN / UNSPSC / COO

Description Value
Country of Origin: RECOVERY FEE
ECCN: EAR99
HTSN: 8542330001
Schedule B: 8542330000
In Stock :  0
Additional inventory
Factory Lead Time: 168 Weeks
Price for: Each
Quantity:
Min:1000  Mult:1000  
USD $:
1000+
$4.61014
2000+
$4.36095
4000+
$4.24618
8000+
$4.14375
16000+
$4.1225