IR21844SPBF
MOSFET DRVR 600V 2.3A 2-OUT Hi/Lo Side Half Brdg Inv/Non-Inv 14-Pin SOIC N
- RoHS 10 Compliant
- Tariff Charges
IR21844SPBF is a high voltage, high-speed power MOSFET and IGBT half-bridge driver with dependent high and low side referenced output channels. Proprietary HVIC and latch-immune CMOS technologies enable ruggedized monolithic construction. The logic input
- Floating channel designed for bootstrap operation, fully operational to +600V
- Tolerant to negative transient voltage dV/dt immune, IN/active low SD input logic
- Gate drive supply range from 10 to 20V, undervoltage lockout for both c
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Half Bridge | ||
| Inverting|Non-Inverting | ||
| High and Low Side | ||
| 680 ns | ||
| 3.3V|5V|CMOS|LSTTL | ||
| CMOS, TTL, TTL | ||
| Matte Tin | ||
| 260 | ||
| 35 ns | ||
| 900 ns | ||
| 60 ns | ||
| 40 ns | ||
| 90 ns | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 2 | ||
| 14 | ||
| 2 | ||
| 2 | ||
| -40 to 125 °C | ||
| 125 °C | ||
| -40 °C | ||
| 270 ns | ||
| 14SOIC N | ||
| 2.3 A | ||
| 14 | ||
| IGBT, MOSFET, Mosfet | ||
| 8.74 x 3.99 x 1.5 mm | ||
| No | ||
| 600 V | ||
| 2.3 A | ||
| 1.9 A | ||
| SOIC N | ||
| 20 V | ||
| 10 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542390050 |
| Schedule B: | 8542390060 |