IR21814SPBF
MOSFET DRVR 600V 2.3A 2-OUT Hi/Lo Side Non-Inv 14-Pin SOIC N Tube
- RoHS 10 Compliant
- Tariff Charges
The IR21814SPBF is a high voltage high speed power MOSFET and IGBT Driver with an independent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is c
- Floating channel designed for bootstrap operation
- Tolerant to negative transient voltage (dV/dt immune)
- Under-voltage lockout for both channels
- Matched propagation delay for both channels
- Logic and power ground ±5V
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Non-Inverting | ||
| High and Low Side | ||
| 180 ns | ||
| 3.3V|5V|CMOS|LSTTL | ||
| CMOS, TTL, TTL | ||
| Matte Tin | ||
| 260 | ||
| 35 ns | ||
| 330 ns | ||
| 60 ns | ||
| 330 ns | ||
| 270 ns | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 2 | ||
| 14 | ||
| 2 | ||
| 2 | ||
| -40 to 125 °C | ||
| 125 °C | ||
| -40 °C | ||
| 220 ns | ||
| 14SOIC N | ||
| 2.3 A | ||
| 14 | ||
| IGBT, MOSFET, Mosfet | ||
| 8.74 x 3.99 x 1.5 mm | ||
| No | ||
| 600 V | ||
| 2.3 A | ||
| 1.9 A | ||
| SOIC N | ||
| 20 V | ||
| 10 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542330001 |
| Schedule B: | 8542330000 |