IR21531PBF
MOSFET DRVR 600V 2-OUT Hi/Lo Side Half Brdg Inv/Non-Inv 8-Pin PDIP
- RoHS 10 Compliant
- Tariff Charges
The IR2153D(S) are an improved version of the popular IR2155 and IR2151 gate driver ICs, and incorporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS 555 timer. The IR2153 provides more functionality and is easier to use than previous ICs. A shutdown feature has been designed into the CT pin, so that both gate driver outputs can be disabled using a low voltage control signal. In addition, the gate driver output pulse widths are the same once the rising under voltage lockout threshold on VCC has been reached, resulting in a more stable profile of frequency vs time at startup. Noise immunity has been improved significantly, both by lowering the peak di/dt of the gate drivers, and by increasing the under voltage lockout hysteresis to 1V. Finally, special attention has been payed to maximizing the latch immunity of the device, and providing comprehensive ESD protection on all pins.
- Integrated 600V half-bridge gate driver
- 15.6V zener clamp on Vcc
- True micro power start up
- Tighter initial dead time control
- Low temperature coefficient dead time
- Shutdown feature (1/6th Vcc) on CT pin
- Increased under voltage lockout Hysteresis (1V)
- Lower power level-shifting circuit
- Constant LO, HO pulse widths at startup
- Lower di/dt gate driver for better noise immunity
- Low side output in phase with RT
- Internal 50nsec (typ.) bootstrap diode (IR2153D)
- Excellent latch immunity on all inputs and outputs
- ESD protection on all leads
- Also available LEAD-FREE
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Half Bridge | ||
| Inverting|Non-Inverting | ||
| High and Low Side | ||
| 80 ns | ||
| CMOS | ||
| Matte Tin | ||
| 260 | ||
| 100 ns | ||
| 150 ns | ||
| Through Hole | ||
| 2 | ||
| 8 | ||
| 2 | ||
| 2 | ||
| 106 kHz | ||
| -40 to 125 °C | ||
| 125 °C | ||
| -40 °C | ||
| 45 ns | ||
| 8PDIP | ||
| 8 | ||
| IGBT, MOSFET, Mosfet | ||
| 10.92 x 7.11 x 5.33 mm | ||
| No | ||
| 600 V | ||
| 260 mA | ||
| 180 mA | ||
| PDIP | ||
| 16.8 V | ||
| 10 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | NO RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542330001 |
| Schedule B: | 8542330000 |