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IR21363STRPBF

MOSFET DRVR 600V 0.35A 6-OUT Hi/Lo Side 3-Phase Brdg Inv 28-Pin SOIC W T/R

Manufacturer:Infineon
Avnet Manufacturer Part #: IR21363STRPBF
Secondary Manufacturer Part#: IR21363STRPBF
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

The IR2136x (J&S) are high voltage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs, down to 3.3 V logic. A current trip function which terminates all six outputs can be derived from an external current sense resistor. An enable function is available to terminate all six outputs simultaneously. An open-drain FAULT signal is provided to indicate that an over current or undervoltage shutdown has occurred. Over current fault conditions are cleared automatically after a delay programmed externally via an RC network connected to the RCIN input. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channels can be used to drive N-channel power MOSFETs or IGBTs in the high side configuration which operates up to 600 V.

  • Floating channel designed for bootstrap operation
  • Fully operational to +600 V
  • Tolerant to negative transient voltage, dV/dt immune
  • Gate drive supply range from 12 V to 20 V (IR21363)
  • Undervoltage lockout for all channels
  • Over-current shutdown turns off all six drivers
  • Independent 3 half-bridge drivers
  • Matched propagation delay for all channels
  • Cross-conduction prevention logic
  • Low side output out of phase with inputs. High side outputs out of phase (IR213(6,63, 65, 66, 67, 68))
  • 3.3 V logic compatible
  • Lower di/dt gate drive for better noise immunity
  • Externally programmable delay for automatic fault clear
  • All parts are LEAD-FREE

Technical Attributes

Find Similar Parts

Description Value
3-Phase Bridge
Inverting
High and Low Side
525 ns
3.3V|CMOS|LSTTL
Matte Tin
260
75 ns
190 ns
690 ns
680 ns
Surface Mount
MSL 3 - 168 hours
6
28
6
6
-40 to 125 °C
125 °C
-40 °C
500 ns
28SOIC W
0.35 A
28
IGBT, MOSFET, Mosfet
18.1 x 7.6 x 2.35 mm
No
600 V
350 mA
200 mA
SOIC W
20 V
12 V

ECCN / UNSPSC / COO

Description Value
Country of Origin: RECOVERY FEE
ECCN: EAR99
HTSN: 8542390050
Schedule B: 8542390060
In Stock :  0
Additional inventory
Factory Lead Time: 140 Weeks
Price for: Each
Quantity:
Min:1000  Mult:1000  
USD $:
1000+
$2.10056
2000+
$2.01872
4000+
$1.93688
6000+
$1.85504
8000+
$1.82094