IR21363JTRPBF
MOSFET DRVR 600V 0.35A 6-OUT Hi/Lo Side 3-Phase Brdg Inv 32-Pin PLCC T/R
- RoHS 10 Compliant
- Tariff Charges
The IR2136x (J&S) are high voltage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs, down to 3.3 V logic. A current trip function which terminates all six outputs can be derived from an external current sense resistor. An enable function is available to terminate all six outputs simultaneously. An open-drain FAULT signal is provided to indicate that an over current or undervoltage shutdown has occurred. Over current fault conditions are cleared automatically after a delay programmed externally via an RC network connected to the RCIN input. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channels can be used to drive N-channel power MOSFETs or IGBTs in the high side configuration which operates up to 600 V.
- Floating channel designed for bootstrap operation
- Fully operational to +600 V
- Tolerant to negative transient voltage, dV/dt immune
- Gate drive supply range from 12 V to 20 V (IR21363)
- Undervoltage lockout for all channels
- Over-current shutdown turns off all six drivers
- Independent 3 half-bridge drivers
- Matched propagation delay for all channels
- Cross-conduction prevention logic
- Low side output out of phase with inputs. High side outputs out of phase (IR213(6,63, 65, 66, 67, 68))
- 3.3 V logic compatible
- Lower di/dt gate drive for better noise immunity
- Externally programmable delay for automatic fault clear
- All parts are LEAD-FREE
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 3-Phase Bridge | ||
| Inverting | ||
| High and Low Side | ||
| 525 ns | ||
| 3.3V|CMOS|LSTTL | ||
| Matte Tin | ||
| 250 | ||
| 75 ns | ||
| 190 ns | ||
| 690 ns | ||
| 680 ns | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 6 | ||
| 32 | ||
| 6 | ||
| 6 | ||
| -40 to 125 °C | ||
| 125 °C | ||
| -40 °C | ||
| 500 ns | ||
| 32PLCC | ||
| 0.35 A | ||
| 32 | ||
| IGBT, MOSFET, Mosfet | ||
| 16.66 x 16.66 x 3.69 mm | ||
| No | ||
| 600 V | ||
| 350 mA | ||
| 200 mA | ||
| PLCC | ||
| 20 V | ||
| 12 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542310075 |
| Schedule B: | 8542310075 |