IR2127PBF
MOSFET DRVR 600V 0.5A 1-OUT Hi Side Non-Inv 8-Pin PDIP
-
RoHS 10 Compliant -
Tariff Charges
The IRS2127 is high voltage, high speed power MOSFET and IGBT drivers. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL outputs, down to 3.3 V. The protection circuity detects over-current in the driven power transistor and terminates the gate drive voltage. An open drain FAULT signal is provided to indicate that an over-current shutdown has occurred. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side or low-side configuration which operates up to 600 V.
- Floating channel designed for bootstrap operation Fully operational to +600V
- Tolerant to negative transient voltage dV/dt immune
- Application-specific gate drive range:
- Motor Drive: 12 V to 20 V (IRS2127)
- Undervoltage lockout
- 3.3 V, 5 V, and 15 V input logic compatible
- FAULT lead indicates shutdown has occurred
- Output in phase with input (IRS2127)
- RoHS compliant
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Non-Inverting | ||
| High Side | ||
| 200 ns | ||
| 3.3V|5V|15V|CMOS|LSTTL | ||
| CMOS, TTL, TTL | ||
| Matte Tin | ||
| 260 | ||
| 65 ns | ||
| 130 ns | ||
| 200 ns | ||
| 250 ns | ||
| Through Hole | ||
| 1 | ||
| 8 | ||
| 1 | ||
| 1 | ||
| -40 to 125 °C | ||
| 125 °C | ||
| -40 °C | ||
| 150 ns | ||
| 8PDIP | ||
| 0.5 A | ||
| 8 | ||
| IGBT, MOSFET, Mosfet | ||
| 10.92 x 7.11 x 5.33 mm | ||
| No | ||
| 600 V | ||
| 500 mA | ||
| 250 mA | ||
| PDIP | ||
| 20 V | ||
| 10 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542390050 |
| Schedule B: | 8542390060 |
Factory Lead Time: