IR2117PBF
Power IC, High Side And Low Side, 10V-20V Supply, 500mA Out, 105ns Delay, DIP-8
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Manufacturer:Infineon
Product Category:
Power Management, Drivers & Controllers, Gate Drivers
Avnet Manufacturer Part #: IR2117PBF
Secondary Manufacturer Part#: 97K2430
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RoHS 10 Compliant -
Tariff Charges
The IR2117/IR2118(S) is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high or low side configuration which operates up to 600 volts.
- High voltage, high speed power MOSFET and IGBT driver
- Floating channel designed for bootstrap operation
- Fully operational to +600V
- Tolerant to negative transient voltage dV/dt immune
- Gate drive supply range from 10 to 20V
- Undervoltage lockout
- CMOS Schmitt-triggered inputs with pull-down
- Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Non-Inverting | ||
| High and Low Side | ||
| 125 ns | ||
| CMOS | ||
| Matte Tin | ||
| 260 | ||
| 65 ns | ||
| 200 ns | ||
| 130 ns | ||
| Through Hole | ||
| MSL 2 - 1 year | ||
| 1 | ||
| 8 | ||
| 1 | ||
| 1 | ||
| -40 to 125 °C | ||
| 125 °C | ||
| -40 °C | ||
| 105 ns | ||
| 8PDIP | ||
| 0.5 A | ||
| 8 | ||
| IGBT, MOSFET, Mosfet | ||
| 10.92 x 7.11 x 5.33 mm | ||
| IR2117(S); IR2118(S) | ||
| No | ||
| 600 V | ||
| 500 mA | ||
| 250 mA | ||
| PDIP | ||
| 20 V | ||
| 10 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542310075 |
| Schedule B: | 8542310075 |
Factory Lead Time: