IR2112SPBF
MOSFET DRVR 600V 0.5A 2-OUT Hi/Lo Side Non-Inv 16-Pin SOIC W
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Manufacturer:Infineon
Product Category:
Power Management, Drivers & Controllers, Gate Drivers
Avnet Manufacturer Part #: IR2112SPBF
Secondary Manufacturer Part#: IR2112SPBF
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RoHS 10 Compliant -
Tariff Charges
The IR2112SPBF is a high voltage high speed power MOSFET and IGBT Driver with independent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. Logic inputs are compatib
- Floating channel designed for bootstrap operation
- Tolerant to negative transient voltage DV/DT Immune
- Under-voltage lockout for both channels
- CMOS Schmitt-triggered inputs with pull-down
- Cycle-by-cycle edge-triggere
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Non-Inverting | ||
| High and Low Side | ||
| 125 ns | ||
| 3.3V|CMOS|LSTTL | ||
| CMOS, TTL, TTL | ||
| Matte Tin | ||
| 260 | ||
| 65 ns | ||
| 180 ns | ||
| 130 ns | ||
| 30 ns | ||
| 30 ns | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 2 | ||
| 16 | ||
| 2 | ||
| 2 | ||
| -40 to 125 °C | ||
| 125 °C | ||
| -40 °C | ||
| 105 ns | ||
| 16SOIC W | ||
| 0.5 A | ||
| 16 | ||
| IGBT, MOSFET, Mosfet | ||
| 10.5 x 7.6 x 2.35 mm | ||
| No | ||
| 600 V | ||
| 500 mA | ||
| 250 mA | ||
| SOIC W | ||
| 20 V | ||
| 10 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542390050 |
| Schedule B: | 8542390060 |
Factory Lead Time: