IR2112PBF
Dual Power IC, High Side And Low Side, 10V-20V Supply, 420mA Out, 105ns Delay, DIP-14
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RoHS 10 Compliant -
Tariff Charges
The IR2112PBF is a high voltage high speed power MOSFET and IGBT Driver with independent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
- Floating channel designed for bootstrap operation
- Tolerant to negative transient voltage DV/DT Immune
- Under-voltage lockout for both channels
- CMOS Schmitt-triggered inputs with pull-down
- Cycle-by-cycle edge-triggered shutdown logic
- Matched propagation delay for both channels
- Outputs in phase with inputs
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Non-Inverting | ||
| High and Low Side | ||
| 125 ns | ||
| 3.3V|CMOS|LSTTL | ||
| CMOS, TTL, TTL | ||
| Matte Tin | ||
| 260 °C | ||
| 65 ns | ||
| 20 V | ||
| 1600 mW | ||
| 180 ns | ||
| 130 ns | ||
| 30 ns | ||
| 30 ns | ||
| 10 V | ||
| Through Hole | ||
| 2 | ||
| 14 | ||
| 2 | ||
| 2 | ||
| 0.18 mA | ||
| -40 to 125 °C | ||
| 125 °C | ||
| -40 °C | ||
| 105 ns | ||
| 14PDIP | ||
| 0.5 A | ||
| 14 | ||
| IGBT, MOSFET, Mosfet | ||
| 20.19(Max) x 7.11(Max) x 5.33(Max) mm | ||
| No | ||
| Extended Industrial | ||
| 500 mA | ||
| 250 mA | ||
| PDIP | ||
| 20 V | ||
| 10 V | ||
| 15 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542390050 |
| Schedule B: | 8542390060 |
Factory Lead Time: