IR2110PBF
Gate Driver, 2 Channels, High Side and Low Side, IGBT, MOSFET, 14 Pins, DIP
- RoHS 10 Compliant
- Tariff Charges
High voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.
- Floating channel designed for bootstrap operation
- Fully operational to +500V or +600V
- Tolerant to negative transient voltage dV/dt immune
- Gate drive supply range from 10 to 20V
- Undervoltage lockout for both channels
- 3.3V logic compatible
- CMOS Schmitt-triggered inputs with pull-down
- Cycle by cycle edge-triggered shutdown logic
- Matched propagation delay for both channels
- Outputs in phase with inputs
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Non-Inverting | ||
| High and Low Side | ||
| 120 ns | ||
| 3.3V|CMOS|LSTTL | ||
| Matte Tin | ||
| 260 | ||
| 25 ns | ||
| 150 ns | ||
| 35 ns | ||
| 10 ns | ||
| 10 ns | ||
| Through Hole | ||
| MSL 3 - 168 hours | ||
| 2 | ||
| 14 | ||
| 2 | ||
| 2 | ||
| -40 to 125 °C | ||
| 125 °C | ||
| -40 °C | ||
| 94 ns | ||
| 14PDIP | ||
| 2.5 A | ||
| 14 | ||
| IGBT, MOSFET, Mosfet | ||
| 20.19 x 7.11 x 5.33 mm | ||
| IR2110; IR2113 | ||
| No | ||
| 500 V | ||
| 2.5 A | ||
| 2.5 A | ||
| PDIP | ||
| 20 V | ||
| 10 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | PROJECTED FEE |
| ECCN: | EAR99 |
| HTSN: | 8542310075 |
| Schedule B: | 8542310075 |