IR2109PBF
MOSFET DRVR 600V 0.35A 2-OUT Hi/Lo Side Half Brdg Inv/Non-Inv 8-Pin PDIP
- RoHS 10 Compliant
- Tariff Charges
High voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels.
- Floating channel designed for bootstrap operation fully operational to +600V
- Tolerant to negative transient voltage dV/dt immune
- Gate drive supply range from 10 to 20V
- Undervoltage lockout for both channels
- 3.3V, 5V
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Half Bridge | ||
| Inverting|Non-Inverting | ||
| High and Low Side | ||
| 750 ns | ||
| 3.3V|5V|15V|CMOS|LSTTL | ||
| CMOS, TTL, TTL | ||
| Matte Tin | ||
| 260 | ||
| 80 ns | ||
| 950 ns | ||
| 220 ns | ||
| 70 ns | ||
| 70 ns | ||
| Through Hole | ||
| 2 | ||
| 8 | ||
| 2 | ||
| 2 | ||
| -40 to 125 °C | ||
| 125 °C | ||
| -40 °C | ||
| 200 ns | ||
| 8PDIP | ||
| 0.35 A | ||
| 8 | ||
| IGBT, MOSFET, Mosfet | ||
| 10.92 x 7.11 x 5.33 mm | ||
| No | ||
| 600 V | ||
| 350 mA | ||
| 200 mA | ||
| PDIP | ||
| 20 V | ||
| 10 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542310075 |
| Schedule B: | 8542310075 |