IR2102SPBF
MOSFET DRVR 600V 0.36A 2-OUT Hi/Lo Side Inv 8-Pin SOIC
- RoHS 10 Compliant
- Tariff Charges
IR2102SPBF is a high voltage, high-speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch-immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatib
- Floating channel designed for bootstrap operation, fully operational to +600V
- Tolerant to negative transient voltage dV/dt immune, undervoltage lockout
- Gate drive supply range from 10 to 20V, turn-on and off delay matching is 50ns
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Inverting | ||
| High and Low Side | ||
| 160 ns | ||
| 3.3V|5V|15V|CMOS|LSTTL | ||
| CMOS, TTL, TTL | ||
| Matte Tin | ||
| 260 | ||
| 90 ns | ||
| 220 ns | ||
| 170 ns | ||
| 50 ns | ||
| 50 ns | ||
| Surface Mount | ||
| MSL 2 - 1 year | ||
| 2 | ||
| 8 | ||
| 2 | ||
| 2 | ||
| -40 to 125 °C | ||
| 125 °C | ||
| -40 °C | ||
| 150 ns | ||
| 8SOIC | ||
| 0.36 A | ||
| 8 | ||
| IGBT, MOSFET, Mosfet | ||
| 5 x 4 x 1.5 mm | ||
| No | ||
| 600 V | ||
| 360 mA | ||
| 210 mA | ||
| SOIC | ||
| 20 V | ||
| 10 V | ||
| 15 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542330001 |
| Schedule B: | 8542330000 |