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IR2011STRPBF

Gate Driver, 2 Channels, High Side and Low Side, MOSFET, 8 Pins, NSOIC

Manufacturer:Infineon
Avnet Manufacturer Part #: IR2011STRPBF
Secondary Manufacturer Part#: IR2011STRPBF
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

The IR2011 is a high power, high speed power MOSFET driver with independent high and low side referenced output channels. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.0V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET in the high side configuration which operates up to 200 volts. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.

  • Floating channel designed for bootstrap operation
  • Fully operational to 200V
  • Tolerant to negative transient voltage, dV/dt immune
  • Gate drive supply range from 10 to 20V
  • Independent low and high side channels
  • Input logic HIN/LIN active high
  • Under voltage lockout for both channels
  • 3.3V and 5V logic compatible
  • CMOS Schmitt-triggered inputs with pull-down
  • Matched propagation delay for both channels

Technical Attributes

Find Similar Parts

Description Value
High Side and Low Side, Low Sid
High and Low Side
Non Isolated
80 ns
3V|3.3V|5V|CMOS|LSTTL
CMOS, TTL
Matte Tin
260
35 ns
80 ns
50 ns
20 ns
20 ns
Surface Mount
MSL 2 - 1 year
2
8
2
2
-40 to 125 °C
125 °C
-40 °C
75 ns
8SOIC
1 A
8
MOSFET
5 x 4 x 1.5 mm
IR2011 Series
No
200 V
1 A
1 A
SOIC
20 V
10 V

ECCN / UNSPSC / COO

Description Value
Country of Origin: RECOVERY FEE
ECCN: EAR99
HTSN: 8542330001
Schedule B: 8542330000
In Stock :  0
Additional inventory
Factory Lead Time: 168 Weeks
Price for: Each
Quantity:
Min:2500  Mult:2500  
USD $:
2500+
$0.92757
5000+
$0.87743
10000+
$0.85434
20000+
$0.83244
40000+
$0.81162