IR2010SPBF
Dual MOSFET Driver IC, High Side And Low Side, 10V-20V Supply, 3A Out, 65ns Delay, SOIC-16
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RoHS 10 Compliant -
Tariff Charges
The IR2010SPBF is a high power high voltage high speed power MOSFET and IGBT Driver with independent high and low-side referenced output channels. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 200V. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.
- Floating channel designed for bootstrap operation
- Tolerant to negative transient voltage (dV/dt immune)
- Under-voltage lockout for both channels
- 3.3V Logic compatible
- Logic and power ground ±5V offset
- CMOS Schmitt-triggered inputs with pull-down
- Shut down input turns OFF both channels
- Cross-conduction prevention logic
- Matched propagation delay for both channels
- Outputs in phase with inputs
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Non-Inverting | ||
| High and Low Side | ||
| 95 ns | ||
| 3.3V|CMOS|LSTTL | ||
| CMOS, TTL, TTL | ||
| Matte Tin | ||
| 260 | ||
| 25 ns | ||
| 135 ns | ||
| 20 ns | ||
| 15 ns | ||
| 15 ns | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 2 | ||
| 16 | ||
| 2 | ||
| 2 | ||
| -40 to 125 °C | ||
| 125 °C | ||
| -40 °C | ||
| 65 ns | ||
| 16SOIC W | ||
| 3 A | ||
| 16 | ||
| IGBT, MOSFET, Mosfet | ||
| 10.5 x 7.6 x 2.35 mm | ||
| No | ||
| 200 V | ||
| 2.5 A | ||
| 2.5 A | ||
| SOIC W | ||
| 20 V | ||
| 10 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542310075 |
| Schedule B: | 8542310075 |
Factory Lead Time: