IPW65R045C7FKSA1
Power MOSFET, N Channel, 650 V, 46 A, 0.04 ohm, TO-247, Through Hole
- RoHS 10 Compliant
- Tariff Charges
The IPW65R045C7 is a 650V N-channel CoolMOS™ Power MOSFET providing the world's lowest RDS (on) with low switching losses and efficiency improvements over the full load range. The new CoolMOS™ C7 series offers a ~50% reduction in turn-off losses (Eoss) compared to the CoolMOS™ CP, offering a GaN-like level of performance in PFC, TTF and other hard-switching topologies. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems. The latest state-of-the-art generation of high voltage power MOSFETs makes AC-DC power supplies more efficient, more compact, lighter and cooler than ever before.
- Reduced energy stored in output capacitance (Eoss)
- Lower gate charge
- Space-saving through reduction of parts
- Improved safety margin
- Lowest conduction losses
- Low switching losses
- Better light load efficiency
- Increasing power density
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 46 | ||
| 45 | ||
| 700 | ||
| 4 | ||
| 3 | ||
| 150 °C | ||
| 227 | ||
| TO-247 | ||
| Through Hole |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290040 |
| Schedule B: | 8541290080 |