IPW60R045P7XKSA1
Power MOSFET, N Channel, 600 V, 61 A, 0.045 ohm, TO-247, Through Hole
- RoHS 10 Compliant
- Tariff Charges
IPW60R045P7XKSA1 is a 600VCoolMOS™ P7 power transistor. The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS™ P7 series is the successor to the CoolMOS™ P6 series. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use,e.g. very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses make switching applications even more efficient, more compact and much cooler. Increased power density solutions enabled by using products with?smaller footprint and higher manufacturing quality due to 2KV ESD?protection. Typical applications include PFC stages, hard switching PWM stages and resonant switching stage for e.g. PC Silver box, adapter, LCD & PDPTV, lighting, server, telecom and UPS.
- Suitable for hard and soft switching (PFC and LLC) due to an outstanding  commutation ruggedness
- Significant reduction of switching and conduction losses
- Excellent ESD robustness2kV (HBM) for all products
- Better RDS(on)/package products compared to competition enabled by a low RDS(on)*A (below 10hm*mm²)
- Ease of use and fast design-in through low ringing tendency and usage across PFC and PWM stages
- Simplified thermal management due to low switching and conduction losses
- Suitable for a wide variety of applications and power ranges
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 61 | ||
| 45 mOhm | ||
| 600 | ||
| 4 | ||
| 3 | ||
| 150 °C | ||
| 201 | ||
| TO-247 | ||
| Through Hole |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542390050 |
| Schedule B: | 8542390060 |