IPP60R170CFD7XKSA1
Power MOSFET, N Channel, 600 V, 14 A, 0.144 ohm, TO-220, Through Hole
- RoHS 10 Compliant
- Tariff Charges
600V CoolMOS™ CFD7 power transistor, a revolutionary technology for high voltage power MOSFETs. Designed according to the superjunction (SJ) principle suitable for use in soft switching topologies optimized for phase-shift full bridge (ZVS), LLC applications server, telecom, EV Charging.
- Ultra-fast body diode
- Low gate charge
- Best-in-class reverse recovery charge (Qrr)
- Improved MOSFET reverse diode dv/dt and diF/dt ruggedness
- Excellent hard commutation ruggedness
- Highest reliability for resonant topologies
- Highest efficiency without standing ease-of-use/performance trade off
- Enabling increased power density solutions
Technical Attributes
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| Description | Value | |
|---|---|---|
| N Channel | ||
| 14 | ||
| 170 | ||
| 650 | ||
| 4.5 | ||
| 3 | ||
| 150 °C | ||
| 75 | ||
| TO-220 | ||
| Through Hole |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542330001 |
| Schedule B: | 8542330000 |