IPP60R120P7XKSA1
Power MOSFET, N Channel, 600 V, 26 A, 0.1 ohm, TO-220, Through Hole
- RoHS 10 Compliant
- Tariff Charges
Infineon extends the large portfolio of the 600 V CoolMOS P7 SJ MOSFET introducing an improved version of the standard TO-247 4 pin package. The TO-247 4 pin with asymmetric leads comes along with 0.54 mm increased creepage distance between the critical leads and enables smoother wave soldering and reduced board yield loss. The additional connection to the source (Kelvin connection), that is used as a reference potential for the gate driving voltage, eliminates the effect of voltage drops over the source inductance enabling faster switching transients which results in significant efficiency improvement. This allows for higher MOSFET RDS(on) usage and BOM cost savings. CoolMOS P7 is Infineon‘s best balanced technology, with optimized balance of ease-of-use and highest energy efficiency
- Suitable for hard and soft switching (PFC and LLC)due to an outstanding commutation ruggedness
- Significant reduction of switching and conduction losses
- Excellent ESD robustness>2kV (HBM) for all products
- Fully qualified acc. JEDEC for industrial applications
- Ease of use and fast design-in through low ringing tendency and usage across PFC and PWM stages
- Simplified thermal management due to low switching and conduction losses
- Suitable for a wide variety of applications and power ranges
- 650V Vds at Tmax
- 120mohm Rds(on) and 78A Id.pulse
- 3 lead TO 220 package
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 26 | ||
| 120 | ||
| 650 | ||
| 4 | ||
| 3 | ||
| 150 °C | ||
| 95 | ||
| TO-220 | ||
| Through Hole |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542390050 |
| Schedule B: | 8542390060 |